大学生一级毛片免费看**,精品国产天堂综合一区在线

Product Features

? Optimized technology for DC/DC converters

? Excellent gate charge x Rds(on) product (FOM)

? Superior thermal resistance

? N-channel,normallevel

? 100 percent avalanche tested

? Pb-free plating; RoHS compliant

? Qualified according to JEDEC1) for target applications

? Halogen-free according to lEC61249-2-21

Attribute	Attribute value
ANSM-Part#	ANSM-BSZ123N08NS3GATMA1
Category	Discrete Semiconductor Products
	Transistors
	FETs, MOSFETs
	Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS?
Package	Tape & Reel (TR)
	Cut Tape (CT)
	/
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33μA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerVDFN
Base Product Number	BSZ123

BSZ123N08NS3GATMA1

Product Data Book：

BSZ123N08NS3GATMA1詳情1

BSZ123N08NS3GATMA1詳情2

BSZ123N08NS3GATMA1詳情3

For more product information, please download the PDF

詳情8.1

詳情頁3.1

詳情5.1

詳情6.1

詳情9

We also provide ：